Low temperature grown AlGaAs passivation in GaAs power MESFET

Author

Nguyen, N.X. ; Ibbetson, J.P. ; Jiang, W.N. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

269

Lastpage

277

Abstract

We report on the device performance of a GaAs power MESFET with Low-Temperature-Grown (LTG) Al_0.3Ga_0.7As passivation. By combining two technologies, LTG passivation and MOCVD selectively regrown contacts, we were able to fabricate a record performance GaAs power MESFET. On-wafer power measurement of a device yielded a maximum output power of 1 W/mm at 30% power-added-efficiency and a linear gain of 11.5 dB. We have also looked at the current transport across LTG-Al_0.3Ga_0.7As as a function of the temperatures to gain insight into its properties

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; passivation; power MESFET; semiconductor growth; vapour phase epitaxial growth; 11.5 dB; 30 percent; Al_0.3Ga_0.7As; GaAs; MOCVD selectively regrown contacts; current transport; device performance; low temperature grown AlGaAs passivation; onwafer power measurement; power MESFET; Annealing; Fabrication; Gallium arsenide; MESFETs; MISFETs; MOCVD; Passivation; Silicon compounds; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482444

Filename

482444