Title :
Low temperature grown AlGaAs passivation in GaAs power MESFET
Author :
Nguyen, N.X. ; Ibbetson, J.P. ; Jiang, W.N. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report on the device performance of a GaAs power MESFET with Low-Temperature-Grown (LTG) Al0.3Ga0.7As passivation. By combining two technologies, LTG passivation and MOCVD selectively regrown contacts, we were able to fabricate a record performance GaAs power MESFET. On-wafer power measurement of a device yielded a maximum output power of 1 W/mm at 30% power-added-efficiency and a linear gain of 11.5 dB. We have also looked at the current transport across LTG-Al0.3Ga0.7As as a function of the temperatures to gain insight into its properties
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; passivation; power MESFET; semiconductor growth; vapour phase epitaxial growth; 11.5 dB; 30 percent; Al0.3Ga0.7As; GaAs; MOCVD selectively regrown contacts; current transport; device performance; low temperature grown AlGaAs passivation; onwafer power measurement; power MESFET; Annealing; Fabrication; Gallium arsenide; MESFETs; MISFETs; MOCVD; Passivation; Silicon compounds; Substrates; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482444
