Title :
Novel SOI-Specific circuit form high-speed radiation-hardened memories
Author :
Haraszti, T.P. ; Pancholy, R. ; Chona, J. ; Schober, R. ; Hunt, K.
Author_Institution :
Microcirc Assoc., Newport, CA
Abstract :
In all of th seven main memory components, the use of the novel SOI-specific sense amplifiers, memory-cells, and logic gates, envinced exceptionally speedy operations. This made possible fabrication and tests of complete memories which feature 2.2 GHz operational speed, 10-12 error/bit/day and 1 Mrad total dose hardness. The SOI memories can indeed provide substantially faster operations than their best bulk counterparts do.
Keywords :
CMOS logic circuits; CMOS memory circuits; amplifiers; integrated circuit design; radiation hardening (electronics); silicon-on-insulator; CMOS SOI memory circuits; CMOS bulk memory circuits; SOI-specific circuit design; Si; high-speed radiation-hardening; logic gates; memory-cells; sense amplifiers; Circuits; Conference proceedings;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656330
