Title :
A high linearity LNA with modified resistor biasing
Author_Institution :
Infineon Technol., Linz, Austria
Abstract :
A 2 GHz SiGe:C HBT low noise amplifier (LNA) with improved gain compression and linearity performance is described. A modified resistor bias feed circuit for the LNA transistor improves its intermodulation and compression behavior compared to a conventional resistor bias feed circuit. Linearity enhancement is achieved by a simple feedback between the base of the current mirror transistor and the LNA transistor decreasing the low frequency bias termination. The manufactured LNA shows an IIP3 improvement of more than 6 dB and a P1dB improvement of around 4 dB compared to a conventional resistor bias feed circuit.
Keywords :
UHF amplifiers; UHF integrated circuits; bipolar integrated circuits; circuit feedback; intermodulation; low noise amplifiers; resistors; HBT low noise amplifier; SiGe:C; current mirror transistor; frequency 2 GHz; gain compression; high linearity LNA; intermodulation; modified resistor bias feed circuit; Circuit noise; Feedback; Feeds; Frequency; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; Mirrors; Performance gain; Resistors; Amplifier; Intermodulation Distortion; LNA; MMIC;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384407
