A high linearity LNA with modified resistor biasing

Author

Leitner, Thomas

Author_Institution

Infineon Technol., Linz, Austria

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1160

Lastpage

1163

Abstract

A 2 GHz SiGe:C HBT low noise amplifier (LNA) with improved gain compression and linearity performance is described. A modified resistor bias feed circuit for the LNA transistor improves its intermodulation and compression behavior compared to a conventional resistor bias feed circuit. Linearity enhancement is achieved by a simple feedback between the base of the current mirror transistor and the LNA transistor decreasing the low frequency bias termination. The manufactured LNA shows an IIP3 improvement of more than 6 dB and a P1dB improvement of around 4 dB compared to a conventional resistor bias feed circuit.

Keywords

UHF amplifiers; UHF integrated circuits; bipolar integrated circuits; circuit feedback; intermodulation; low noise amplifiers; resistors; HBT low noise amplifier; SiGe:C; current mirror transistor; frequency 2 GHz; gain compression; high linearity LNA; intermodulation; modified resistor bias feed circuit; Circuit noise; Feedback; Feeds; Frequency; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; Mirrors; Performance gain; Resistors; Amplifier; Intermodulation Distortion; LNA; MMIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384407

Filename

5384407