Title :
30-Watt Power Amplifier for 3.5GHz WiMAX Base station Application
Author :
Sarfraz, M. ; Akkul, M.
Author_Institution :
Filtronic Plc., Shipley
Abstract :
This paper describes the design of a 30W GaAs pHEMT PA (power amplifier) for WiMAX applications. The PA is realized on a CuW carrier with various ceramic matching components. The PA attained 10dB small signal gain and 30W CW output power with a drain efficiency of around 60% at a supply voltage of 12V. Under WiMAX 802.16-2004 OFDM modulation (3.5MHz BW, 64QAM sub carrier modulation and peak to average ratio of 10dB) the PA achieves better than 2% EVM (error vector magnitude), -45dBc ACPR (adjacent channel power ratio) at 34dBm (2.5W) Pavg (average output power) with 16% average drain efficiency in a frequency band of 3.3-3.7GHz
Keywords :
HEMT circuits; III-V semiconductors; OFDM modulation; WiMax; copper compounds; gallium arsenide; microwave power amplifiers; 12 V; 2.5 W; 3.3 to 3.7 GHz; 30 W; CuW; CuW carrier; GaAs; GaAs pHEMT PA; GaAs pHEMT power amplifier; OFDM modulation; QAM sub carrier modulation; WiMAX base station; adjacent channel power ratio; ceramic matching components; error vector magnitude; Base stations; Ceramics; Gallium arsenide; OFDM modulation; PHEMTs; Peak to average power ratio; Power amplifiers; Power generation; Voltage; WiMAX; ACPR; EVM; GaAs pHEMT; OFDM; PA; WiMAX;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281451
