Title :
High temperature RF behavior of SOI MOSFETs for low-power low-voltage applications
Author :
Emam, M. ; Vanhoenacker-Janvier, D. ; Anil, K. ; Ida, J. ; Raskin, J.P.
Author_Institution :
EMIC, Univ. Catholique de Louvain, Louvain-la Neuve
Abstract :
At zero-temperature-coefficient bias points, transistors are known to have stable DC performance with temperature variation. In this work, the RF behavior at those specific bias points is presented in order to provide design guidelines for low-power low-voltage circuits featuring stable RF performance in variable temperature environments and applications. Fully- and partially depleted SOI MOSFETs with and without body contact are analyzed.
Keywords :
MOSFET; equivalent circuits; high-temperature electronics; low-power electronics; radiofrequency integrated circuits; silicon-on-insulator; SOI MOSFET; Si; equivalent circuits; high temperature RF behavior; low-power low-voltage circuit applications; variable temperature environments; zero-temperature-coefficient bias points; Conference proceedings; Energy consumption; Equivalent circuits; Fingers; Intrusion detection; MOSFETs; Radio frequency; Temperature; Transconductance; User-generated content;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656333
