High temperature RF behavior of SOI MOSFETs for low-power low-voltage applications

Author

Emam, M. ; Vanhoenacker-Janvier, D. ; Anil, K. ; Ida, J. ; Raskin, J.P.

Author_Institution

EMIC, Univ. Catholique de Louvain, Louvain-la Neuve

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

139

Lastpage

140

Abstract

At zero-temperature-coefficient bias points, transistors are known to have stable DC performance with temperature variation. In this work, the RF behavior at those specific bias points is presented in order to provide design guidelines for low-power low-voltage circuits featuring stable RF performance in variable temperature environments and applications. Fully- and partially depleted SOI MOSFETs with and without body contact are analyzed.

Keywords

MOSFET; equivalent circuits; high-temperature electronics; low-power electronics; radiofrequency integrated circuits; silicon-on-insulator; SOI MOSFET; Si; equivalent circuits; high temperature RF behavior; low-power low-voltage circuit applications; variable temperature environments; zero-temperature-coefficient bias points; Conference proceedings; Energy consumption; Equivalent circuits; Fingers; Intrusion detection; MOSFETs; Radio frequency; Temperature; Transconductance; User-generated content;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2008. SOI. IEEE International

Conference_Location

New Paltz, NY

ISSN

1078-621X

Print_ISBN

978-1-4244-1954-8

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2008.4656333

Filename

4656333

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3168148