Title :
Ku-band Up-converter Multi-function MMIC using 0.25 µm SiGe BiCMOS Technology
Author :
Noh, YounSub ; Uhm, Manseok ; Yom, Inbok
Author_Institution :
Broadcasting & Telecommun. Convergence Res. Lab., Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
Abstract :
Single Ku-band multi-function transmitter (Tx) MMIC for phased -array applications is designed using 0.25 μm SiGe BiCMOS technology. The MMIC includes gain amplifiers, a power amplifier, digital phase shifters, digital attenuators, and a serial-to-parallel converter. The Tx MMIC exhibits gain of 19 dB, P1dB of 21 dBm with phase and gain control functions over the Ku-band frequency of 13.5 GHz to 15 GHz. The power amplifier in a Tx MMIC was pre-designed and measured results showed a output P1dB of 21.5 dBm, gain of 14.5 dB and peak PAE of 29.1%.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; MMIC frequency convertors; MMIC phase shifters; MMIC power amplifiers; amplification; attenuators; BiCMOS technology; Ku-band up-converter multifunction MMIC; digital attenuators; digital phase shifters; frequency 13.5 GHz to 15 GHz; gain amplifiers; gain control functions; phased -array applications; power amplifier; serial-to-parallel converter; size 0.25 μm; Attenuator; Ku-band; SiGe BiCMOS; phase shifter; phased-array; power amplifier;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384409
