Title :
Impact of surface and buried interface passivation on ultrathin SOI electrical properties
Author :
Hamaide, G. ; Allibert, F. ; Cristoloveanu, S.
Author_Institution :
Soitec S.A., Crolles
Abstract :
In this work, we clarify the role of surface preparation on the buried channel properties. First, we demonstrate the efficiency of a forming gas anneal (FGA) to erase the difference between thin and thick films. Then, we investigate various combinations of surface treatments and their impact on the top surface and buried interface, separately.
Keywords :
MIS structures; annealing; electron mobility; hole mobility; passivation; silicon-on-insulator; buried interface passivation; electrical properties; forming gas anneal; hole mobility; pseudoMOS electron mobility; surface preparation; surface treatments; Annealing; Argon; Conference proceedings; Electron mobility; Hafnium; MOSFETs; Passivation; Surface treatment; Testing; Thermal degradation;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656336
