Author :
Romanjek, K. ; Royer, C. Le ; Pouydebasque, A. ; Augendre, E. ; Vinet, M. ; Tabone, C. ; Sanchez, L. ; Hartmann, J.-M. ; Grampeix, H. ; Mazzocchi, V. ; Clavelier, L. ; Garros, X. ; Reimbold, G. ; Naval, N. ; Boulanger, F. ; Deleonibus, S.
Abstract :
The extraction of the trap density on Ge/gate-stack (top) and Ge/BOX (bottom) interfaces of germanium-on-insulator pMOSFETs is shown using the Lim & Fossum model historically developed for fully depleted SOI devices. The doping and the thickness of the Ge film do not change significantly the top interface trap density. The bottom one is slightly raised by doping the Ge film. This method can be used as a simple and efficient meaning of the interface trap density levels monitoring during process optimization of GeOI devices.
Keywords :
MOSFET; doping; elemental semiconductors; germanium; high-k dielectric thin films; interface states; optimisation; semiconductor device models; semiconductor thin films; Ge; Lim-Fossum model; SOI devices; doping; high-k-metal gate germanium-on-insulator pMOSFET; interface trap density; optimization; thin film; Conference proceedings; Decision support systems; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFET circuits; Quadratic programming; Semiconductor films; Tin;
