Advances in GaN-based discrete power devices for L- and X-band applications

Author

Wurfl, Joachim ; Behtash, Reza ; Lossy, Richard ; Liero, Armin ; Heinrich, Wolfgang ; Trankle, Gunther ; Hirche, Klaus ; Fischer, G.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1716

Lastpage

1718

Abstract

Progress in fabrication of packaged discrete L- and X-band power AlGaN/GaN HFETs is presented. By exploiting typical GaN HFET related features such as improved linearity, power density, gain and broad band capability the devices allow for novel architectures for base stations in mobile communications and for space applications. Highlights to be presented are L-band power bar devices designed for continuous wave (cw) operation delivering an cw output power of 30 W and 100 W with 20 dB and 14 dB linear gain respectively. The architecture of these devices is based on novel gate "feed plate" structures. Furthermore discrete, hermetically packaged X-band devices for space based SSPAs in the power range of 10 W (continuous wave) at 8 GHz are presented

Keywords

aluminium compounds; gallium compounds; microwave power amplifiers; microwave power transistors; power HEMT; wide band gap semiconductors; 100 W; 14 dB; 20 dB; 30 W; 8 GHz; AlGaN-GaN; HFET; L-band; X-band; base stations; microwave power amplifiers; mobile communications; power bars; power heterostructures field effect transistors; Aluminum gallium nitride; Base stations; Fabrication; Gallium nitride; HEMTs; Linearity; MODFETs; Mobile communication; Packaging; Space stations; Gallium nitride; discrete; power amplifiers; power bars;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281472

Filename

4058181