Title :
16.4 GHz SiGe BiCMOS sub-harmonic mixer with reactive I/Q generators in RF and LO paths
Author :
Tseng, Sheng-Che ; Syu, Jin-Siang ; Su, Jen-Yi ; Wei, Hung-Ju ; Meng, Chinchun ; Huang, Guo-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
This paper demonstrates a high-frequency 0.35-¿m SiGe BiCMOS sub-harmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RF and LO signals. The I/Q sub-harmonic downconverter with single-ended LO, RF, and IF (I/Q) ports has a conversion gain of 1 dB, IP1dB of -10 dBm, IIP3 of 0 dBm and IIP2 of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6°, respectively. The dc power consumption of this I/Q mixer without output buffers is approximately 5 mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC mixers; bipolar MMIC; field effect MMIC; semiconductor materials; BiCMOS subharmonic mixer; I/Q subharmonic downconverter; SiGe; differential quadrature LO signals; differential quadrature RF signals; frequency 16.4 GHz; reactive in-phase generators; reactive quadrature-phase generators; BiCMOS integrated circuits; Filters; Germanium silicon alloys; Phase shifters; Phase transformers; RF signals; Radio frequency; Resistors; Signal generators; Silicon germanium; I/Q; SiGe BiCMOS; direct conversion; subharmonic; transformer;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384412
