Title :
Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT
Author :
Gao, Smith ; Butterworth, P. ; Sambell, A. ; Sanabria, C. ; Xu, H. ; Heikman, S. ; Mishra, U. ; York, R.A.
Author_Institution :
Active Antenna Group, Northumbria Univ., Newcastle Upon Tyne
Abstract :
This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.45-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0-GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; gallium arsenide; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 2 GHz; 2.45 GHz; GaAs; GaN; HEMT device; MMIC; PCB technology; UHF; inverse class-F power amplifier design; microwave class-F power amplifier design; microwave power amplifiers; monolithic integrated circuit; pHEMT; Gallium arsenide; Gallium nitride; HEMTs; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave technology; PHEMTs; Power amplifiers; Power generation; GaAs; GaN HEMT; MMIC; Power amplifiers; class F; high efficiency; inverse class-F;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281473
