Title :
An E-Band(71–76, 81–86 GHz) balanced frequency tripler for high-speed communications
Author :
Abbasi, Morteza ; Gavell, Marcus ; Ferndahl, Mattias ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
An E-band transistor-based balanced frequency tripler is implemented using a 0.15 ¿m GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90° hybrids at the input and output improves the port impedance matching which is measured to be better than 15 dB at the input and 10 dB at the output over the frequencies of interest. The tripler has a conversion loss of 11.5 dB from 71 GHz to 76 GHz and 14 dB from 81 GHz to 86 GHz. The second and forth harmonics are suppressed by more than 30 dB and the fundamental frequency by 20 dB. The tripler can deliver -2 dBm output power.
Keywords :
III-V semiconductors; MIMIC; frequency multipliers; gallium arsenide; high electron mobility transistors; impedance matching; E-band transistor-based balanced frequency tripler; GaAs; forth harmonics suppression; frequency 71 GHz to 76 GHz; frequency 81 GHz to 86 GHz; fundamental frequency; high-speed communications; loss 11.5 dB; loss 14 dB; mHEMT process; port impedance matching; second harmonics suppression; single-chip RF front-end; size 0.15 mum; Circuits; Frequency conversion; Gallium arsenide; Millimeter wave technology; Millimeter wave transistors; Power generation; Power harmonic filters; Radio frequency; Signal generators; mHEMTs; Balanced; E-Band; Frequency Tripler; GaAs; MMIC; Single-Chip;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384416
