Contactless Dielectric Charging Mechanisms in RF-MEMS Capacitive Switches

Author

Papaioannou, G.J. ; Wang, G. ; Bessas, D. ; Papapolymerou, J.

Author_Institution

Dept. of Phys., Athens Univ.

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1739

Lastpage

1742

Abstract

This paper investigates the possible dielectric layer polarization mechanisms, which contribute to intrinsic charging effects in capacitive RF MEMS switches. The MEMS switches are operated bellow instability point in order to avoid charge injection, hence to allow the dielectric charging to be induced by dipolar or space charge polarization. The possible contribution of interface charge polarization is also examined. The possibility of separating these mechanisms is investigated. Finally it is demonstrated that these polarization mechanisms are responsible for driving a MEMS switch beyond the instability point although the device is biased bellow the pull-in voltage

Keywords

capacitor switching; dielectric materials; microactuators; microswitches; reliability; RF-MEMS capacitive switches; contactless dielectric charging; dielectric layer polarization; dielectric materials; interface charge polarization; intrinsic charging effects; microactuators; microelectromechanical devices; reliability; Bridge circuits; Dielectrics and electrical insulation; Electrodes; Micromechanical devices; Microswitches; Polarization; Radiofrequency microelectromechanical systems; Space charge; Switches; Voltage; Dielectric materials; microactuators; microelectromechanical devices; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281478

Filename

4058187