Author :
Matsukawa, T. ; Endo, K. ; Ishikawa, Y. ; Yamauchi, H. ; Liu, Y.X. ; O´uchi, S. ; Tsukada, J. ; Ishii, K. ; Sakamoto, K. ; Suzu, E. ; Masahara, M.
Abstract :
The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for TfinLt25 nm and also causes the Rp variability due to the Tfin variation.
Keywords :
MOSFET; electric resistance measurement; ion implantation; optimisation; semiconductor device measurement; FinFET; ion implantation; optimization; parasitic resistance measurement; source-drain resistance; Conference proceedings; Electrical resistance measurement; FinFETs; MOSFETs; Metallization; Metalworking machines; Nanoelectronics; Semiconductor device modeling; Semiconductor process modeling; Tin;
