• DocumentCode
    3168354
  • Title

    Impact of extension and source/drain resistance on FinFET performance

  • Author

    Matsukawa, T. ; Endo, K. ; Ishikawa, Y. ; Yamauchi, H. ; Liu, Y.X. ; O´uchi, S. ; Tsukada, J. ; Ishii, K. ; Sakamoto, K. ; Suzu, E. ; Masahara, M.

  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    The parasitic resistance of the FinFET is investigated by the measurement based analysis. The RS/D model suggests that careful optimization as to the NiSi incorporation is necessary for the effective Rp reduction. The Rext seriously increases the Rp for TfinLt25 nm and also causes the Rp variability due to the Tfin variation.
  • Keywords
    MOSFET; electric resistance measurement; ion implantation; optimisation; semiconductor device measurement; FinFET; ion implantation; optimization; parasitic resistance measurement; source-drain resistance; Conference proceedings; Electrical resistance measurement; FinFETs; MOSFETs; Metallization; Metalworking machines; Nanoelectronics; Semiconductor device modeling; Semiconductor process modeling; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656343
  • Filename
    4656343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3168354