DocumentCode
3168370
Title
High-frequency characterization of intrinsic FinFET channel
Author
Sakai, H. ; O´uchi, S. ; Matsukawa, T. ; Endo, K. ; Liu, Y.X. ; Tsukada, T. ; Ishikawa, Y. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Sakamoto, K. ; Masahara, M. ; Ishikuro, H.
Author_Institution
Keio Univ., Yokohama, Japan
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
1
Lastpage
2
Abstract
This paper reports the precise extraction method of high-frequency characteristics of an intrinsic part of the FinFETs. For the de-embedding of the device parasitics, open, short, and through patterns optimized for the FinFET process were originally designed. The measured data of the intrinsic part of the FinFETs were compared to the device model with extracted parameters from preliminary experiment.
Keywords
MOSFET; semiconductor device models; device model; device parasitics; high-frequency characterization; intrinsic FinFET channel; Current measurement; FinFETs; Frequency measurement; Logic gates; Metals; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2010 IEEE International
Conference_Location
San Diego, CA
ISSN
1078-621x
Print_ISBN
978-1-4244-9130-8
Electronic_ISBN
1078-621x
Type
conf
DOI
10.1109/SOI.2010.5641064
Filename
5641064
Link To Document