DocumentCode
3168393
Title
Analysis of SOI MOSFET physics for compact modeling
Author
Baba, S. ; Ida, J. ; Tani, K. ; Chiba, T. ; Igarashi, Yoichiro ; Sakamoto, K. ; Miura-Mattausch, M.
Author_Institution
Oki Engineerig Co., Ltd., Tokyo, Japan
fYear
2010
fDate
11-14 Oct. 2010
Firstpage
1
Lastpage
2
Abstract
This report shows an analysis of device operation on dynamic depletion mode of SOI MOSFETs, from view points of wide range geometry size, temperature and also considering device physics, second peak of gm, self-heating effect and so on. It is summarized a general picture of DD mode, which is important knowledge for next new compact circuit model.
Keywords
MOSFET; semiconductor device models; silicon-on-insulator; SOI MOSFET; compact circuit model; compact modeling; device operation; device physics; dynamic depletion mode; geometry size; self-heating effect; temperature; Logic gates;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference (SOI), 2010 IEEE International
Conference_Location
San Diego, CA
ISSN
1078-621x
Print_ISBN
978-1-4244-9130-8
Electronic_ISBN
1078-621x
Type
conf
DOI
10.1109/SOI.2010.5641065
Filename
5641065
Link To Document