Title :
Analysis of SOI MOSFET physics for compact modeling
Author :
Baba, S. ; Ida, J. ; Tani, K. ; Chiba, T. ; Igarashi, Yoichiro ; Sakamoto, K. ; Miura-Mattausch, M.
Author_Institution :
Oki Engineerig Co., Ltd., Tokyo, Japan
Abstract :
This report shows an analysis of device operation on dynamic depletion mode of SOI MOSFETs, from view points of wide range geometry size, temperature and also considering device physics, second peak of gm, self-heating effect and so on. It is summarized a general picture of DD mode, which is important knowledge for next new compact circuit model.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; SOI MOSFET; compact circuit model; compact modeling; device operation; device physics; dynamic depletion mode; geometry size; self-heating effect; temperature; Logic gates;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641065
