Title :
Improvement of thickness uniformity of SOI by numerically controlled sacrificial oxidation using atmospheric-pressure plasma
Author :
Sano, Y. ; Masuda, T. ; Kamisaka, S. ; Mimura, H. ; Matsuyama, S. ; Yamauchi, K.
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita
Abstract :
Using a method of numerically controlled sacrificial oxidation, the dispersion of the thickness of the silicon layer of a 300 mm SOI wafer was successfully improved from PV: 2.4 nm to PV 0.9 nm.
Keywords :
MOSFET; oxidation; silicon-on-insulator; SOI MOSFET; Si; atmospheric-pressure plasma; numerically controlled sacrificial oxidation; silicon layer; Atmospheric-pressure plasmas; Conference proceedings; Electrodes; Oxidation; Plasma density; Shape; Silicon; Spectroscopy; Thickness control; Thickness measurement;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656346
