• DocumentCode
    3168417
  • Title

    Improvement of thickness uniformity of SOI by numerically controlled sacrificial oxidation using atmospheric-pressure plasma

  • Author

    Sano, Y. ; Masuda, T. ; Kamisaka, S. ; Mimura, H. ; Matsuyama, S. ; Yamauchi, K.

  • Author_Institution
    Grad. Sch. of Eng., Osaka Univ., Suita
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    Using a method of numerically controlled sacrificial oxidation, the dispersion of the thickness of the silicon layer of a 300 mm SOI wafer was successfully improved from PV: 2.4 nm to PV 0.9 nm.
  • Keywords
    MOSFET; oxidation; silicon-on-insulator; SOI MOSFET; Si; atmospheric-pressure plasma; numerically controlled sacrificial oxidation; silicon layer; Atmospheric-pressure plasmas; Conference proceedings; Electrodes; Oxidation; Plasma density; Shape; Silicon; Spectroscopy; Thickness control; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656346
  • Filename
    4656346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3168417