Low threshold voltage quarter micron MOSFETs for low power applications

Low threshold voltage, high performance, quarter micron N/P MOSFETs for 1 V applications were fabricated. A 4.5/spl times/ reduction in switching power with the same switching speed was achieved, when compared with standard Vt devices operated at a higher supply voltage. The feasibility of lowering standby power using substrate bias was shown. The challenges of scaling low Vt devices down to shorter channel lengths and possible scaling approaches are discussed.