Title :
Sub-10 ps Pulse Generator with Biphase Modulation Function in 0.13-μm InP HEMT
Author :
Kawano, Yoichi ; Nakasha, Yasuhiro ; Suzuki, Toshihide ; Ohki, Toshihiro ; Takahashi, Tsuyoshi ; Makiyama, Kozo ; Hirose, Tatsuya ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa
Abstract :
A next-generation ultra-wideband (UWB) pulse generator with a biphase function is reported. To obtain ultrashort duration pulses, a novel speeding-up and circuit and biphase modulator circuit were developed. The IC was fabricated in a 0.13-μm-gate InP-HEMT technology, which has gm of 1520 mS/mm and a f/T of 195 GHz. A pulse with a full width at half maximum of 9 ps and a 15-ps biphase modulated pulse were obtained. The power consumption of the ICs were 620 mW and 640 mW, respectively.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MIMIC; field effect logic circuits; indium compounds; pulse generators; ultra wideband technology; 0.13 micron; 15 ps; 195 GHz; 620 mW; 640 mW; 9 ps; HEMT IC; InP; biphase modulation; ultra wideband pulse generator; ultrashort duration pulses; Energy consumption; Frequency; HEMTs; Indium phosphide; Pulse circuits; Pulse generation; Pulse modulation; Pulse width modulation; Space vector pulse width modulation; Ultra wideband technology;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281026
