Title :
Trade-off in IGBT safe operating area and performance parameters
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
The need for application-specific power semiconductor device design is stressed in this paper. It is shown that the choice of forward voltage switching time and safe operating area (SOA) of the device critically depend on the specific application. A response surface plotting the variation of VCEontOFF and SOA of the device with key device process parameters is required to facilitate optimized design. The trade-off between SOA and other performance parameters is illustrated in this paper with the help of a commercially available power IGBT
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; safety; application-specific power semiconductor device design; design optimisation; forward voltage switching time; performance parameters; power IGBT; response surface; safe operating area; Charge carrier lifetime; Cost function; Electronics industry; Insulated gate bipolar transistors; Response surface methodology; Semiconductor optical amplifiers; Silicon; Stress; Switching loss; Threshold voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628975
