Title :
Application advantages of high voltage high current IGBTs with punch through technology
Author :
Donlon, John F. ; Motto, Eric R. ; Ishii, Kazufumi ; Iida, Tomoharu
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Abstract :
New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through approach while retaining the low loss characteristics of punch-through technology. Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics
Keywords :
bipolar transistor switches; modules; power bipolar transistors; power semiconductor switches; semiconductor device manufacture; 1200 A; 2500 V; 3300 V; application advantages; collector p+ concentration; device characteristics; local lifetime control; low loss characteristics; positive temperature coefficient; power IGBTs; process technologies; punch through technology; punch-through design; rugged safe operating area; saturation voltage; wafer processing; Buffer layers; Charge carrier lifetime; Chip scale packaging; Design optimization; Electron beams; Insulated gate bipolar transistors; Power engineering and energy; Silicon; USA Councils; Voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628976
