Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor

Author

Mookken, John ; Lewis, Robert ; Hudgins, Jerry L. ; Agarwal, A. ; Casady, J.B. ; Siergiej, S. ; Seshadri, S.

Author_Institution

Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

1000

Abstract

The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si-based IGBTs, MCTs and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameters were extracted to develop a simple PSPICE circuit model for the SiC GTO. The simulated response of the model is compared to the experimental response of the device

Keywords

circuit analysis computing; power semiconductor switches; semiconductor device models; semiconductor device testing; silicon compounds; software packages; switching; thyristors; PSPICE circuit model; SiC; SiC asymmetric GTO thyristors; experimental response; forward blocking voltage parameters; forward current density; performance measurements; simulated response; switching characteristics; turn-off time; Anodes; Circuit testing; Current density; Epitaxial layers; Power system modeling; SPICE; Silicon carbide; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.628983

Filename

628983