Title :
Pyrotransistor-GaAs FET with a "pyroelectric wafer" gate
Author :
Poplavko, Y.M. ; Moskalyuk, V.A. ; Timofeyev, A.I. ; Prokopenko, Y.V.
Author_Institution :
Kiev Polytech. Inst., Ukraine
Abstract :
The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; infrared detectors; photodetectors; pyroelectric detectors; GaAs; GaAs FET; MESFET technology; artificial pyroelectricity; multifunction properties; one-crystal pyroelectric sensors; pyroelectric wafer gate; pyrotransistor; semiconductor; thermal-to-electric transducer; uncooled far infrared detector; voltage sensitivity; Ceramics; Crystals; FETs; Gallium arsenide; III-V semiconductor materials; Infrared detectors; Microelectronics; Pyroelectricity; Transducers; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522464
