Title :
Antiferroelectric/ferroelectric composite thin films
Author :
Dausch, D.E. ; Wang, F. ; Haertling, G.H.
Author_Institution :
Gilbert C. Robinson Dept. of Ceramic Eng., Clemson Univ., SC, USA
Abstract :
PLZT-based antiferroelectric (AFE)/ferroelectric (FE) composite thin films were fabricated by automatic spin coating and crystallized by rapid thermal processing. A computer-controlled automatic spin coat reactor was used to spin composite thin films from acetate precursors with successive layers of FE and AFE composition. Films were spun on platinum-coated silicon substrates and rapid thermal thermally processed at 700°C. Composite thin films exhibited improved AFE-type properties including increased dielectric constant (K) and saturation polarization (Psat) and decreased FE switching field (EF ) compared to typical AFE compositions. X-ray diffraction results indicated that the composite thin films consisted of distinct AFE and FE phases. Modeling of the dielectric properties revealed linear series capacitor behavior within the composite thin films for low electric field conditions; however, nonlinear effects were apparent at high electric fields
Keywords :
X-ray diffraction; antiferroelectric materials; coatings; composite materials; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; piezoceramics; rapid thermal processing; 700 degC; PLZT; PbLaZrO3TiO3Jk; Pt-Si; Pt-coated Si substrates; Si; X-ray diffraction; acetate precursors; antiferroelectric/ferroelectric composite thin films; automatic spin coating; computer-controlled automatic spin coat reactor; crystallization; dielectric constant; ferroelectric switching field; high electric fields; linear series capacitor behavior; low electric field conditions; modeling; nonlinear effects; rapid thermal processing; saturation polarization; Coatings; Crystallization; Dielectric thin films; Ferroelectric films; Ferroelectric materials; Inductors; Iron; Rapid thermal processing; Semiconductor films; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522465
