A novel CMOS image sensor using an output voltage feedback with variable dynamic range

Author

Myunghan Bae ; Sung-Hyun Jo ; Hee Ho Lee ; Minho Lee ; Ju-Yeong Kim ; Pyung Choi ; Jang-Kyoo Shin ; Seungmin Kim ; Jeongyeob Kim

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2013

fDate

22-23 Oct. 2013

Firstpage

398

Lastpage

401

Abstract

In this study, we propose a new complementary metal-oxide semiconductor (CMOS) image sensor to extend the dynamic range. The proposed active pixel sensor (APS) uses a gate/body-tied PMOSFET-type (GBT) photodetector and an output voltage feedback structure. Although the size of the proposed APS is slightly larger than a conventional APS, the dynamic range of the proposed pixel is much wider than a conventional APS. And the proposed APS has a varied dynamic range from adjusting the reference voltage. The proposed APS has been designed and fabricated by using 0.35 μm 2-poly 4-metal standard CMOS technology, and its characteristics have been evaluated.

Keywords

CMOS image sensors; MOSFET; feedback; photodetectors; 2-poly 4-metal standard CMOS technology; APS; GBT photodetector; active pixel sensor; complementary metal oxide semiconductor; gate/body-tied PMOSFET; novel CMOS image sensor; output voltage feedback structure; size 0.35 mum; variable dynamic range; CMOS image sensors; Dynamic range; Photodetectors; Sensitivity; Voltage measurement; CMOS image sensor; dynamic range; feedback structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Imaging Systems and Techniques (IST), 2013 IEEE International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4673-5790-6

Type

conf

DOI

10.1109/IST.2013.6729729

Filename

6729729