• DocumentCode
    3169189
  • Title

    A compact 802.11b/g WLAN front-end module with integrated passive devices on modified ceramic substrate

  • Author

    Wang, Ruonan ; Lou, Robin ; Cheng, Kevin ; Leung, Lydia ; Lin, Jyh-Rong ; Chung, Tom

  • Author_Institution
    Hong Kong Appl. Sci. & Technol. Res. Inst. (ASTRI), Hong Kong, China
  • fYear
    2009
  • fDate
    7-10 Dec. 2009
  • Firstpage
    1489
  • Lastpage
    1492
  • Abstract
    We present a thin film on modified ceramic (TFoMC) technique in this work to achieve high-accuracy and high-uniformity design. The integrated passive devices (IPDs), including capacitors, inductors, band-pass filters and Baluns, are realized based on the proposed TFoMC technology. The IPD characterization results are close to the HFSS simulation, and reveal good in-substrate uniformity at the same time. To evaluate the TFoMC substrate performance, a WLAN front-end module (FEM) is designed and fabricated by integrating the IPDs, power amplifier (PA) die and switch die on the modified ceramic substrate. The FEM exhibits a 31-dB large signal gain with the power add efficiency over 10% in the pass band, and passes the spectrum mask specifications under 802.11b/g modulations. The error vector magnitudes of the FEM are 1.0 and 2.9%rms for 802.11b and 802.11g modulations, respectively. The IPD and FEM characterization results meet all the design requirements, indicating the excellent performance of the TFoMC substrate and making it as a promising candidate for the wireless-related applications.
  • Keywords
    passive networks; power amplifiers; substrates; thin films; wireless LAN; HFSS simulation; compact 802.11b/g WLAN front-end module; error vector magnitudes; integrated passive devices; power amplifier die; spectrum mask specifications; switch die; thin film on modified ceramic technique; Band pass filters; Capacitors; Ceramics; Impedance matching; Power amplifiers; Substrates; Switches; Thin film inductors; Transistors; Wireless LAN; Ceramic substrate; front end modules; integrated passive devices; power amplifiers; thin-film process;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. APMC 2009. Asia Pacific
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-2801-4
  • Electronic_ISBN
    978-1-4244-2802-1
  • Type

    conf

  • DOI
    10.1109/APMC.2009.5384456
  • Filename
    5384456