DocumentCode
3169465
Title
Experience of developing and using CAD tools for III-V FETs effectively in a nonideal world
Author
Webster, D.R. ; Parker, A.E. ; Hutabarat, M. ; Ataei, G.R. ; Haigh, D.G. ; Radmore, P.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear
1999
fDate
1999
Firstpage
42430
Lastpage
316
Abstract
This paper describes the experience gained in developing and using CAD tools for the design of low distortion and nonlinear FET circuits using III-V technology. It includes a description of the CAD packages used, key features required in the CAD packages for realistic simulation, techniques for small and large signal “quick look” assessment for choosing bias and load and some example circuits where the tools have been used successfully
Keywords
circuit CAD; CAD packages; CAD tools; III-V MESFETs; MMIC; bias; circuit simulation; large signal analysis; load; low distortion circuits; nonlinear FET circuits; small signal analysis;
fLanguage
English
Publisher
iet
Conference_Titel
Effective Microwave CAD Tools (Ref. No. 1999/064), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19990377
Filename
793900
Link To Document