DocumentCode :
3169604
Title :
Copper ion migration in insulated metal substrates
Author :
Okamoto, Kenji ; Maeda, Takahiko ; Haga, Kohji
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan
fYear :
1995
fDate :
18-21 Sep 1995
Firstpage :
659
Lastpage :
663
Abstract :
Insulated metal substrates (IMS) constructed with three layers a metal base plate, a thin insulation layer and a copper conduction foil have been applied to power circuits of 100-400 V. In such IMS, the insulation layer is stressed under a high strength electric field of 1-3 kV/mm. This paper describes the results of enhanced thermal humidity bias tests (THB) (85°C,70%RH,DC800V,1250 V) for the insulation layer. It was clarified that copper ion migration occurred in the insulation layer and that its occurrence was related to the amount of ionic impurity in insulation material. The new IMS which the authors have developed has increased resistance to such copper ion migration
Keywords :
electric breakdown; insulation testing; integrated circuit testing; ion exchange; power integrated circuits; substrates; 100 to 400 V; 1250 V; 800 V; 85 C; copper ion migration; electric field; enhanced thermal humidity bias tests; insulated metal substrates; insulation layer stress; insulation material breakdown; ionic impurity; power circuits; Circuits; Copper; Dielectrics and electrical insulation; Electrodes; Humidity; Insulation testing; Life testing; Materials testing; Substrates; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Electronics Insulation Conference, 1995, and Electrical Manufacturing & Coil Winding Conference. Proceedings
Conference_Location :
Rosemont, IL
Print_ISBN :
0-941783-15-4
Type :
conf
DOI :
10.1109/EEIC.1995.482512
Filename :
482512
Link To Document :
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