Copper ion migration in insulated metal substrates

Author

Okamoto, Kenji ; Maeda, Takahiko ; Haga, Kohji

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan

fYear

1995

fDate

18-21 Sep 1995

Firstpage

659

Lastpage

663

Abstract

Insulated metal substrates (IMS) constructed with three layers a metal base plate, a thin insulation layer and a copper conduction foil have been applied to power circuits of 100-400 V. In such IMS, the insulation layer is stressed under a high strength electric field of 1-3 kV/mm. This paper describes the results of enhanced thermal humidity bias tests (THB) (85°C,70%RH,DC800V,1250 V) for the insulation layer. It was clarified that copper ion migration occurred in the insulation layer and that its occurrence was related to the amount of ionic impurity in insulation material. The new IMS which the authors have developed has increased resistance to such copper ion migration

Keywords

electric breakdown; insulation testing; integrated circuit testing; ion exchange; power integrated circuits; substrates; 100 to 400 V; 1250 V; 800 V; 85 C; copper ion migration; electric field; enhanced thermal humidity bias tests; insulated metal substrates; insulation layer stress; insulation material breakdown; ionic impurity; power circuits; Circuits; Copper; Dielectrics and electrical insulation; Electrodes; Humidity; Insulation testing; Life testing; Materials testing; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Electronics Insulation Conference, 1995, and Electrical Manufacturing & Coil Winding Conference. Proceedings

Conference_Location

Rosemont, IL

Print_ISBN

0-941783-15-4

Type

conf

DOI

10.1109/EEIC.1995.482512

Filename

482512