DocumentCode
3169666
Title
Applications and synthesis of zinc oxide: An emerging wide bandgap material
Author
Hussain, Babar ; Akhtar Raja, M. Yasin ; Na Lu ; Ferguson, Ian
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
88
Lastpage
93
Abstract
Zinc oxide, an important metal oxide, is a wide bandgap II-VI semiconductor material with large exciton binding energy of 60 meV at room temperature. Zinc oxide has some unique characteristics like large piezoelectric constant, stability at higher temperature, and suitability for a variety of nanostructures. It has potential applications in several optics and optoelectronics technologies including display panels, electroluminescent and photovoltaic devices, thermoelectric devices, and nanogenerators. We present a short review on synthesis of zinc oxide emphasizing on MOCVD which is the most popular method to grow ZnO. Few applications of zinc oxide have also been discussed very briefly. Previously reported significant results about MOCVD growth of zinc oxide are discussed in detail. Also, we have grown zinc oxide thin films with different thicknesses on sapphire substrates using MOCVD. It has been observed that crystal quality degrades with increase in thickness of the film due to lattice mismatch and growth rate substantially decreases with increase in chamber pressure.
Keywords
III-V semiconductors; MOCVD; sapphire; thin films; wide band gap semiconductors; zinc compounds; II-VI semiconductor material; MOCVD growth; ZnO; crystal quality; display panels; electroluminescent device; electron volt energy 60 meV; exciton binding energ; higher temperature stability; lattice mismatch; metal oxide; nanogenerators; nanostructures; optoelectronics technology; photovoltaic device; piezoelectric constant; sapphire substrates; temperature 293 K to 298 K; thermoelectric device; wide bandgap material; zinc oxide thin films; Crystals; Films; MOCVD; Nanostructures; Substrates; Temperature; Zinc oxide; HEMT; MOCVD TFT; TCO; UV emitters; Zinc oxide; nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
High Capacity Optical Networks and Enabling Technologies (HONET-CNS), 2013 10th International Conference on
Conference_Location
Magosa
Print_ISBN
978-1-4799-2568-1
Type
conf
DOI
10.1109/HONET.2013.6729763
Filename
6729763
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