• DocumentCode
    3169666
  • Title

    Applications and synthesis of zinc oxide: An emerging wide bandgap material

  • Author

    Hussain, Babar ; Akhtar Raja, M. Yasin ; Na Lu ; Ferguson, Ian

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA
  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    88
  • Lastpage
    93
  • Abstract
    Zinc oxide, an important metal oxide, is a wide bandgap II-VI semiconductor material with large exciton binding energy of 60 meV at room temperature. Zinc oxide has some unique characteristics like large piezoelectric constant, stability at higher temperature, and suitability for a variety of nanostructures. It has potential applications in several optics and optoelectronics technologies including display panels, electroluminescent and photovoltaic devices, thermoelectric devices, and nanogenerators. We present a short review on synthesis of zinc oxide emphasizing on MOCVD which is the most popular method to grow ZnO. Few applications of zinc oxide have also been discussed very briefly. Previously reported significant results about MOCVD growth of zinc oxide are discussed in detail. Also, we have grown zinc oxide thin films with different thicknesses on sapphire substrates using MOCVD. It has been observed that crystal quality degrades with increase in thickness of the film due to lattice mismatch and growth rate substantially decreases with increase in chamber pressure.
  • Keywords
    III-V semiconductors; MOCVD; sapphire; thin films; wide band gap semiconductors; zinc compounds; II-VI semiconductor material; MOCVD growth; ZnO; crystal quality; display panels; electroluminescent device; electron volt energy 60 meV; exciton binding energ; higher temperature stability; lattice mismatch; metal oxide; nanogenerators; nanostructures; optoelectronics technology; photovoltaic device; piezoelectric constant; sapphire substrates; temperature 293 K to 298 K; thermoelectric device; wide bandgap material; zinc oxide thin films; Crystals; Films; MOCVD; Nanostructures; Substrates; Temperature; Zinc oxide; HEMT; MOCVD TFT; TCO; UV emitters; Zinc oxide; nanostructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Capacity Optical Networks and Enabling Technologies (HONET-CNS), 2013 10th International Conference on
  • Conference_Location
    Magosa
  • Print_ISBN
    978-1-4799-2568-1
  • Type

    conf

  • DOI
    10.1109/HONET.2013.6729763
  • Filename
    6729763