DocumentCode :
3169824
Title :
Simulation of hot electron transport in semiconductor devices
Author :
Fernando, Chenjing L. ; Frensley, William R. ; Bowen, R. Chris
Author_Institution :
Erik Jonsson Sch. of Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA
fYear :
1995
fDate :
7-9 Aug 1995
Firstpage :
343
Lastpage :
347
Abstract :
A numerical technique based on semiclassical transport theory is presented to describe highly non-equilibrium electron transport in submicron devices. Open boundary conditions, polar optical phonon scattering, and full band structures are employed in our calculation. Special treatment of the abrupt junctions of potential profile is included in our model, so is the quantum reflection occurring around heterojunctions. The technique has been incorporated into an interactive program in which users may specify a region where the calculation is to be performed. Our results show that the polar optical phonon scattering has an important impact on the electron transport in hot electron transistors
Keywords :
band structure; electron-phonon interactions; electronic engineering computing; finite difference methods; hot carriers; hot electron transistors; semiconductor device models; semiconductor heterojunctions; abrupt junctions; full band structures; heterojunctions; highly nonequilibrium electron transport; hot electron transistors; hot electron transport; interactive program; model; numerical technique; open boundary conditions; polar optical phonon scattering; potential profile; quantum reflection; semiclassical transport theory; semiconductor devices; submicron devices; Boundary conditions; Distribution functions; Electron optics; Equations; Heterojunctions; Optical reflection; Optical scattering; Particle scattering; Phonons; Semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
ISSN :
1079-4700
Print_ISBN :
0-7803-3970-3
Type :
conf
DOI :
10.1109/CORNEL.1995.482525
Filename :
482525
Link To Document :
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