Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

Author

Chua, C.L. ; Zhu, Z.H. ; Lo, Y.H. ; Hong, M. ; Bhat, R.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

361

Lastpage

363

Abstract

We present a 1.53 μm strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm

Keywords

distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser transitions; optical pumping; quantum well lasers; spectral line breadth; surface emitting lasers; 1.5 micron; 10 mA; AlAs-GaAs; AlAs/GaAs mirrors; MQW VCSEL; dynamic single mode characteristics; linewidth; long wavelength VCSEL; room temperature pulsed pumping; semiconductor lasers; strain-compensated quantum wells; threshold current; vertical cavity SEL; wafer-fused DBR mirrors; Current measurement; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Pulse measurements; Quantum well devices; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482528

Filename

482528