Title :
23 GHz InP-based (1.55 μm) pseudomorphic MQW ridge waveguide lasers
Author :
Yoon, H. ; Gutierrez-Aitken, A.L. ; Singh, J. ; Bhattacharya, P. ; Lourdudoss, S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
We have studied the characteristics of InP-based multiple quantum well (MQW) coplanar ridge waveguide lasers in order to obtain large bandwidth under weakly index-guided conditions at relatively low photon density. We have also investigated the benefits of the strain compensated structure in achieving low-threshold, high-speed lasers. A maximum modulation bandwidth of 23 GHz was measured for a 2×200 μm2 laser. This is the highest bandwidth measured for a ridge waveguide laser operating at 1.55 μm. The photon density for this modulation bandwidth was only 1.8×1016 cm-3 , compared to ~1017 cm-3 typical in buried heterostructure devices
Keywords :
III-V semiconductors; indium compounds; laser transitions; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 micron; 23 GHz; InP; InP-based multiple quantum well; coplanar ridge waveguide; high-speed lasers; large bandwidth; low photon density; maximum modulation bandwidth; pseudomorphic MQW; ridge waveguide lasers; strain compensated structure; weakly index-guided conditions; Bandwidth; Capacitive sensors; Indium phosphide; Optical design; Optical waveguides; Quantum well devices; Quantum well lasers; Tensile strain; Threshold current; Waveguide lasers;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482529
