DocumentCode :
3169962
Title :
LIP characteristics of nanostructured ZnO thin films
Author :
Al-Inad, T.M. ; Tawfik, Walid ; Farooq, W.A. ; Aldwayyan, A.S.
Author_Institution :
Dept. of Phys., AL Imam Muhammad Ibn Saud Islamic Univ. AIMSIU, Riyadh, Saudi Arabia
fYear :
2013
fDate :
11-13 Dec. 2013
Firstpage :
161
Lastpage :
164
Abstract :
In this study., we investigate the dependence of laser induced plasma spectroscopy LIPS plasma characteristics on the nanostructured and bulk ZnO targets. This study was performed using 670 mJ of the fundamental wavelength of Nd:YAG laser energy and 5 ns pulse width focused normal to the surface of the sample. The analysis of the observed emission spectra revealed the zinc characteristic spectral lines with high resolution for both samples. It is found that the plasma electron temperature reaches values of 4131 ±5% Kelvin for bulk and 5107 ±5% Kelvin for nano - ZnO samples. Furthermore, the average values of electron density Ne (bulk) found to be 8.47E+15 cm-3 while Ne(nano) reaches 1.24E+16 cm-3. These results indicate that both plasma temperature and electron density are increased in case of nanostructured ZnO more than the bulk case. This is due to changing the martial matrix, which affect the plasma profile.
Keywords :
II-VI semiconductors; laser beam effects; nanostructured materials; neodymium; plasma materials processing; semiconductor thin films; solid lasers; zinc compounds; LIP characteristics; LIPS plasma characteristics; YAG:Nd; ZnO; electron density; emission spectra; energy 670 mJ; laser induced plasma spectroscopy; nanostructured thin films; plasma electron temperature; plasma profile; spectral lines; time 5 ns; zinc characteristic; Lips; Materials; Plasma temperature; Surface emitting lasers; Zinc oxide; LIPS spectroscopy; Plasma density; ZnO; nanostrcuture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET-CNS), 2013 10th International Conference on
Conference_Location :
Magosa
Print_ISBN :
978-1-4799-2568-1
Type :
conf
DOI :
10.1109/HONET.2013.6729778
Filename :
6729778
Link To Document :
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