Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters

Author

Lovblom, Rickard ; Fluckiger, Ralf ; Ostinelli, Olivier ; Alexandrova, Maria ; Bolognesi, C.R.

Author_Institution

ETH Zurich, Zurich, Switzerland

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

602

Lastpage

604

Abstract

Recombination effects in GaAsSb-based double-heterojunction bipolar transistors featuring AlInP and GaInP emitters are investigated. AlInP emitters provide a reduced intrinsic recombination but result in a significantly increased base surface recombination in comparison to GaInP emitters. Photoluminescence measurements confirm that the GaAsSb surface after etching AlInP has a higher recombination velocity and exhibits a greater sensitivity to the passivation method than when a GaInP emitter is used.

Keywords

III-V semiconductors; aluminium compounds; arsenic compounds; etching; gallium compounds; heterojunction bipolar transistors; indium compounds; photoluminescence; AlInP; AlInP emitter; DHBT; GaAsSb; GaInP; GaInP emitter; double-heterojunction bipolar transistor; emitter size effect; etching; passivation method; photoluminescence measurement; recombination effect; recombination velocity; AlInP; GaAsSb; GaInP; current gain; double-heterojunction bipolar transistors (DHBTs); emitter size effect; millimeter-wave transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2250897

Filename

6491438