Title :
Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters
Author :
Lovblom, Rickard ; Fluckiger, Ralf ; Ostinelli, Olivier ; Alexandrova, Maria ; Bolognesi, C.R.
Author_Institution :
ETH Zurich, Zurich, Switzerland
Abstract :
Recombination effects in GaAsSb-based double-heterojunction bipolar transistors featuring AlInP and GaInP emitters are investigated. AlInP emitters provide a reduced intrinsic recombination but result in a significantly increased base surface recombination in comparison to GaInP emitters. Photoluminescence measurements confirm that the GaAsSb surface after etching AlInP has a higher recombination velocity and exhibits a greater sensitivity to the passivation method than when a GaInP emitter is used.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; etching; gallium compounds; heterojunction bipolar transistors; indium compounds; photoluminescence; AlInP; AlInP emitter; DHBT; GaAsSb; GaInP; GaInP emitter; double-heterojunction bipolar transistor; emitter size effect; etching; passivation method; photoluminescence measurement; recombination effect; recombination velocity; AlInP; GaAsSb; GaInP; current gain; double-heterojunction bipolar transistors (DHBTs); emitter size effect; millimeter-wave transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2250897
