A theoretical investigation for the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the limitations of the modulation bandwidth in high-speed quantum well lasers

We present a theoretical model to investigate the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the modulation response in quantum well (QW) lasers. We find that the degradation of the resonant frequency that limits the modulation bandwidth of QW lasers results from the enhancement of carrier escape and the suppression of carrier capture processes by the effect of carrier heating and lattice heating. The excess carrier heating is due to the finite lifetime of longitudinal optical phonons (i.e., effects of hot phonons)