A SOI epitaxial-channel Si-MOSFET with velocity overshoot

Author

Beer, L. ; Appel, W. ; Dudek, V. ; Höfflinger, B.

Author_Institution

Inst. for Microelectron., Stuttgart, Germany

fYear

1995

fDate

7-9 Aug 1995

Firstpage

440

Lastpage

444

Abstract

A novel device fabrication process using selective silicon epitaxy with lateral overgrowth and in-situ channel region generation by dopant switching during the growth process is presented. Based on this procedure SOI MOSFETs with channel lengths down to 100 nm were produced completely independent of lithographical resolution restrictions. Together with a 6 nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature

Keywords

MOSFET; carrier mobility; semiconductor doping; semiconductor growth; silicon-on-insulator; vapour phase epitaxial growth; 100 nm; 6 nm; 700 mS/mm; Al-SiON-SiO₂-Si; SOI MOSFET; SOI epitaxial-channel Si-MOSFET; channel length; device fabrication process; dopant switching; in-situ channel region generation; intrinsic transconductance; lateral overgrowth; oxinitride gate dielectric; selective silicon epitaxy; velocity overshoot; Crystallization; Dielectrics; Doping; Epitaxial growth; Fabrication; MOSFETs; Microelectronics; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482538

Filename

482538