Title :
A SOI epitaxial-channel Si-MOSFET with velocity overshoot
Author :
Beer, L. ; Appel, W. ; Dudek, V. ; Höfflinger, B.
Author_Institution :
Inst. for Microelectron., Stuttgart, Germany
Abstract :
A novel device fabrication process using selective silicon epitaxy with lateral overgrowth and in-situ channel region generation by dopant switching during the growth process is presented. Based on this procedure SOI MOSFETs with channel lengths down to 100 nm were produced completely independent of lithographical resolution restrictions. Together with a 6 nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature
Keywords :
MOSFET; carrier mobility; semiconductor doping; semiconductor growth; silicon-on-insulator; vapour phase epitaxial growth; 100 nm; 6 nm; 700 mS/mm; Al-SiON-SiO2-Si; SOI MOSFET; SOI epitaxial-channel Si-MOSFET; channel length; device fabrication process; dopant switching; in-situ channel region generation; intrinsic transconductance; lateral overgrowth; oxinitride gate dielectric; selective silicon epitaxy; velocity overshoot; Crystallization; Dielectrics; Doping; Epitaxial growth; Fabrication; MOSFETs; Microelectronics; Silicon; Substrates; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482538
