Title :
DC to radio-frequency characterization of ZrO2 dielectric for “Metal-Insulator-Metal” integrated capacitors
Author :
Bertaud, T. ; Vallée, C. ; Bermond, C. ; Lacrevaz, T. ; Fléchet, B. ; Farcy, A. ; Blonkovski, S.
Author_Institution :
IMEP-LAHC, Univ. de Savoie, Le Bourget du Lac, France
Abstract :
This paper deals with the electrical and wideband frequency characterizations of Metal-Insulator-Metal capacitors integrating medium-k material ZrO2. Characterizations are performed from DC up to 4 GHz on micro-strip waveguides structures. We investigate electrical performance of MIM capacitors which integrate thicknesses of 45 nm to 10 nm of ZrO2 dielectric layer. In particular, this paper focuses on the frequency effect on the voltage linearity of these capacitors. The dependence of the Voltage Capacitance Coefficient ¿ is underlined from 1 kHz to 1 GHz.
Keywords :
MIM devices; dielectric thin films; microstrip lines; thin film capacitors; transmission lines; waveguides; zirconium compounds; DC characterization; ZrO2; capacitors; dielectric layer; electrical characterization; frequency 1 kHz to 1 GHz; frequency 4 GHz; frequency effect; medium-¿ material; metal-insulator-metal capacitors; microstrip transmission lines; microstrip waveguides structures; radio-frequency characterization; size 45 nm to 10 nm; voltage capacitance coefficient; voltage linearity; wideband frequency characterization; Capacitance; Coplanar transmission lines; Dielectric materials; MIM capacitors; Microstrip; Radio frequency; Testing; Tin; Voltage; Zirconium; C(V) characterization; MIM capacitors; RF technology; VCC; ZrO2;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384500
