Applying Line, Offset-Series, Offset-Shunt calibration for on-wafer CMOS device characterizations

This paper presents a new calibration method using line, offset-series, offset-shunt standards for microwave scattering parameter measurements with applications of CMOS on-wafer device characterizations. The modifications of the reference planes for the series and the shunt standards avoid the ill-conditioned problem for the self-calibration equations as the phase shift of the line standard approaching 180 degrees. The measurement results are shown for an NMOS FET in TSMC CMOS 0.18 ¿m technology from 2 GHz to 60 GHz with comparisons of TRL calibration method.