Title :
Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice
Author :
Nguyen, Chanh ; Liu, Takyiu ; Sun, Hsiang-Chih ; Chen, Mary ; Rensch, David ; Nguyen, Nguyen X. ; Mishra, Umesh
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and fT. The effects of CSL parameters on current transport are investigated
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; electric breakdown; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; AlInAs-GaInAs-InP; CSL parameters; DHBTs; band-gap engineered material; base-collector design; base-collector junction; breakdown voltage; chirped superlattice; current transport; double heterojunction bipolar transistor; electrostatic potential; energy band profile; hot electron launcher structure; ionized dopants; space charge region; Chirp; Double heterojunction bipolar transistors; Electrons; Electrostatics; Indium phosphide; Microwave amplifiers; Photonic band gap; Power amplifiers; Space charge; Superlattices;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482552
