DocumentCode
3170460
Title
Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image
Author
Smith, W.Lee ; Welles, Cliff ; Bivas, A. ; Yost, F.G. ; Campbell, J.E.
Author_Institution
Therma-Wave Inc., Fremont, CA, USA
fYear
1990
fDate
27-29 March 1990
Firstpage
200
Lastpage
208
Abstract
Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<>
Keywords
VLSI; aluminium; crack detection; failure analysis; measurement by laser beam; metallisation; nondestructive testing; photothermal effects; 673 K; Al metallisation; NDT; Ostwald ripening; agglomeration of voids; direct measurement; growth process; heat treatment; imaging stress-induced voids; metallization; nondestructive technique; physical movement; stress-driven diffusive model; stress-induced void growth; stress-originating passivation layers; stress-void phenomena; submicron linewidths; submicron resolution; subsurface voids; thermal wave modulated optical reflectance image; voids within metallization; Area measurement; Metallization; Optical imaging; Optical modulation; Passivation; Photothermal effects; Reflectivity; Statistics; Stress measurement; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location
New Orleans, LA, USA
Type
conf
DOI
10.1109/RELPHY.1990.66087
Filename
66087
Link To Document