Title :
High-power 630-nm-band laser diodes
Author :
Hiroyama, R. ; Bessho, Y. ; Shono, M. ; Sawada, M. ; Ibaraki, A.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
In this paper, we report high-power 630-nm-band AlGaInP strain compensated SQW laser diodes demonstrating the high light output power of 72 mW and the high power of 30 mW operation up to 75 C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; 30 mW; 630 nm; 72 mW; 75 C; AlGaInP; AlGaInP strain compensated SQW laser diodes; high light output power; high power; high-power 630-nm-band laser diodes; Absorption; Diode lasers; Laser beams; Light sources; Microelectronics; Power generation; Reflectivity; Temperature dependence; Tensile strain; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630494
