• DocumentCode
    317076
  • Title

    Low threshold 670 nm native-oxide confined GaInP/(AlxGa 1-x)0.5In0.5P quantum well lasers

  • Author

    Sun, Decai ; Treat, D.W.

  • Author_Institution
    Xerox Palo Alto Res. Center, CA, USA
  • Volume
    1
  • fYear
    1997
  • fDate
    10-13 Nov 1997
  • Firstpage
    18
  • Abstract
    Summary form only given. In this paper, we report high performance native-oxide confined InGaP-AlGaInP quantum well (QW) visible laser diodes by wet oxidation of Al0.5In0.5P. These lasers show improved operation characteristics with lower threshold currents and higher quantum efficiencies as compared to conventional buried ridge visible lasers fabricated by etching and regrowth
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical fabrication; oxidation; quantum well lasers; semiconductor technology; 670 nm; Al0.5In0.5P; GaInP/(AlxGa1-x)0.5In0.5 P; InGaP-AlGaInP; InGaP-AlGaInP quantum well visible laser diodes; high performance; higher quantum efficiencies; lower threshold currents; native-oxide confined; operation characteristics; wet oxidation; Aluminum; Diode lasers; Optical waveguides; Oxidation; Quantum well lasers; Refractive index; Semiconductor lasers; Sun; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-3895-2
  • Type

    conf

  • DOI
    10.1109/LEOS.1997.630495
  • Filename
    630495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=317076