DocumentCode :
317076
Title :
Low threshold 670 nm native-oxide confined GaInP/(AlxGa 1-x)0.5In0.5P quantum well lasers
Author :
Sun, Decai ; Treat, D.W.
Author_Institution :
Xerox Palo Alto Res. Center, CA, USA
Volume :
1
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
18
Abstract :
Summary form only given. In this paper, we report high performance native-oxide confined InGaP-AlGaInP quantum well (QW) visible laser diodes by wet oxidation of Al0.5In0.5P. These lasers show improved operation characteristics with lower threshold currents and higher quantum efficiencies as compared to conventional buried ridge visible lasers fabricated by etching and regrowth
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; optical fabrication; oxidation; quantum well lasers; semiconductor technology; 670 nm; Al0.5In0.5P; GaInP/(AlxGa1-x)0.5In0.5 P; InGaP-AlGaInP; InGaP-AlGaInP quantum well visible laser diodes; high performance; higher quantum efficiencies; lower threshold currents; native-oxide confined; operation characteristics; wet oxidation; Aluminum; Diode lasers; Optical waveguides; Oxidation; Quantum well lasers; Refractive index; Semiconductor lasers; Sun; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.630495
Filename :
630495
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=317076
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