High power 1.55 μm DPB laser diodes integrated with vertical mode expanders

Author

Jeon, Heonsu ; Mathur, Atul ; Ziari, Mehrdad ; Lang, Robert

Author_Institution

SDL Inc., San Jose, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

67

Abstract

Summary form only given. In conclusion, we have fabricated a 1.55 μm strained InGaAsP semiconductor DFB QW laser diode with a narrow divergence beam profile by monolithically integrating a vertical mode expander inside the laser cavity. Over 80mW single mode output power was obtained with the side mode suppression ratio greater than 40dB. The coupling loss of a tapered DFB LD into a lensed single mode fiber was about 2.2dB (corresponding to 60% coupling efficiency) due to circular nature of the output beam

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser beams; laser cavity resonators; laser modes; laser transitions; optical fabrication; optical fibre couplers; optical losses; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.55 mum; 60 percent; 80 mW; InGaAsP; coupling efficiency; coupling loss; high power 1.55 μm DPB laser diodes; laser cavity; lensed single mode fiber; monolithically integrating; narrow divergence beam profile; output beam; side mode suppression ratio; single mode output power; strained InGaAsP semiconductor DFB QW laser diode; tapered DFB LD; vertical mode expander; vertical mode expanders; Diode lasers; Fiber lasers; Laser beams; Laser modes; MOCVD; Optical coupling; Optical fiber devices; Power generation; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630520

Filename

630520