Title :
III-V nitride-based lasers
Author_Institution :
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Abstract :
The continuous-wave operation of an InGaN multi-quantum-well structure laser diode was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100°C and a long lifetime of 300 hours
Keywords :
III-V semiconductors; gallium compounds; indium compounds; life testing; quantum well lasers; 100 degC; 300 h; 50 mW; III-V nitride-based lasers; InGaN; InGaN multi-quantum-well structure laser diode; continuous-wave operation; high operating temperature; high output power; long lifetime; room temperature; Current measurement; Diode lasers; III-V semiconductor materials; Internet; Pulse measurements; Quantum well devices; Space vector pulse width modulation; Spontaneous emission; Stimulated emission; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630526
