DocumentCode :
317103
Title :
660 nm angled grating DFB lasers
Author :
Pezeshki, B. ; DeMars, S.D. ; Osinski, J.S. ; Zelinski, M. ; Lang, R.L.
Author_Institution :
SDL Inc., San Jose, CA, USA
Volume :
1
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
81
Abstract :
We demonstrate the first visible wavelength angled DFBs with pulsed power levels approaching 0.5 W and CW powers of 200 mW. The device structure is fabricated in the same way as visible wavelength broad area DFB lasers, except that both the gain region and the grating are tilted with respect to the facets. The optical mode is confined laterally by the diffraction grating, and only the component normal to the facet is reflected back into the cavity. Since the grating is operated at an angle, the pitch is considerably increased, and a first order grating is possible even at short wavelengths. The grating reflectivity is highly angle and wavelength selective, and filters out higher order spatial modes with different propagation constants, resulting in single mode operation. The device was fabricated using MOCVD with a two step growth on a GaAs substrate. The first epitaxy included a lower n-type InAlP cladding region, an undoped InAlGaP waveguide containing InGaP quantum wells, and a p-doped InAlGaP grating layer. These devices provide nearly collimated beams in the lateral direction are not limited by catastrophic mirror damage
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; waveguide lasers; 0.5 W; 200 mW; 660 nm; CW powers; GaAs; GaAs substrate; InAlGaP; InGaP; InGaP quantum wells; MOCVD; angled grating DFB lasers; cavity; diffraction grating; facets; filter; first order grating; gain region; grating; grating reflectivity; higher order spatial modes; lower n-type InAlP cladding region; nearly collimated beams; optical mode; p-doped InAlGaP grating layer; pitch; pulsed power levels; single mode operation; two step growth; undoped InAlGaP waveguide; visible wavelength; wavelength selective; Diffraction gratings; Gallium arsenide; Laser modes; MOCVD; Optical devices; Optical diffraction; Optical filters; Optical pulses; Propagation constant; Reflectivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.630527
Filename :
630527
Link To Document :
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