Title :
Monolithically integrated DFB-MOPA at 670 nm wavelength
Author :
Lichtenstein, N. ; Gauggel, H.-P. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
We report on a monolithically integrated DFB master oscillator power amplifier (DFB-MOPA) in the material system GaInP/AlGaInP producing 300 mW of single-lobed power at 673 nm. The DFB-MOPA was realized on a GaInP/AlGaInP single quantum well structure, grown by low-pressure MOVPE. We studied the junction-up mounted DFB-MOPA under long-pulsed operation (20 μs/1 % duty-cycle) at 10°C to maintain most of the cw-operation characteristics. An L-I curve for three different oscillator currents is shown
Keywords :
aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; integrated optics; laser transitions; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 20 mus; 300 mW; 670 to 673 nm; DFB master oscillator power amplifier; GaInP-AlGaInP; GaInP/AlGaInP single quantum well structure; L-I curve; cw-operation characteristics; junction-up mounted DFB-MOPA; long-pulsed operation; low-pressure MOVPE; monolithically integrated DFB-MOPA; oscillator currents; single-lobed power; Diffraction; Distributed feedback devices; Epitaxial growth; Gratings; Heat sinks; Operational amplifiers; Oscillators; Power amplifiers; Power generation; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630528
