High power, high reliability single mode lasers at 640-650 nm with low aspect ratio

Author

Lu, BO ; Osinski, J.S. ; Pezeshki, B. ; Schmitt, B.

Author_Institution

SDL Inc., San Jose, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

85

Abstract

High power, high reliability laser diodes at wavelengths of 640 nm-650 nm have been demonstrated, with a catastrophic optical damage (COD) power level of 90 mW and an aspect ratio of <3:1. Current life-tests show over 500 hours at 30 mW, 50 °C with little degradation. Our 640-650 nm laser epitaxial structure consists of a GaInP/AlGaInP quantum well active region between n-AlInP and p-AlInP cladding layers

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser reliability; laser transitions; life testing; quantum well lasers; 30 mW; 50 degC; 500 h; 640 to 650 nm; 90 mW; AlInP; GaInP-AlGaInP; GaInP/AlGaInP quantum well active region; aspect ratio; catastrophic optical damage; degradation; epitaxial structure; high power; high reliability single mode lasers; laser diodes; life-tests; low aspect ratio; n-AlInP cladding layers; p-AlInP cladding layers; Bonding; DVD; Degradation; Diode lasers; Laser modes; Life testing; Memory; Power lasers; Quantum well lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630530

Filename

630530