Title :
New CMOS devices and compact modeling
Author_Institution :
Univ. of California, Berkeley
Abstract :
FinFET provides several advantages over the planar MOSFET structure-less short-channel effect, less variation in threshold voltage, and higher carrier mobility, allowing scaling to 5 nm gate length. Using embedded SRAM as the entry point, FinFET may enter manufacturing at the 32 nm node. BSI M-MG is a turn-key compact model of multi-gate MOSFETs fabricated on either SOI or bulk substrates. A compact model of multi-gate transistors will facilitate their adoption.
Keywords :
CMOS integrated circuits; MOSFET; SRAM chips; integrated circuit modelling; semiconductor device models; CMOS device; FinFET; carrier mobility; compact modeling; embedded SRAM; multigate MOSFET; multigate transistors; short-channel effect; threshold voltage; CMOS technology; Capacitance; FinFETs; Leakage current; MOSFET circuits; Manufacturing; Random access memory; Semiconductor device modeling; Silicon; Voltage; CMOS scaling; Compact model; FinFET; MOSFET; SRAM;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472441
