DocumentCode :
3171241
Title :
SiGe HBT reliability issues associated with operation in extreme environments
Author :
Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear :
2006
fDate :
18-20 Jan. 2006
Abstract :
Electronics operating in harsh surroundings falling outside the domain of conventional circuit specifications are called "extreme environment" electronics. Extreme environments include, for instance, very low (cryogenic) temperatures (e.g., 77K = -196degC), very high temperatures (e.g., 200degC), and radiation (e.g., in space). SiGe HBTs are uniquely suited to such extreme environment applications, and in this paper we discuss the reliability issues that are necessarily encountered when using SiGe technology under these conditions
Keywords :
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; semiconductor device reliability; HBT reliability; SiGe; cryogenic temperatures; extreme environments electronics; heterojunction bipolar transistors; Aerospace electronics; CMOS technology; Circuits; Consumer electronics; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Nuclear electronics; Silicon germanium; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
Type :
conf
DOI :
10.1109/SMIC.2005.1587886
Filename :
1587886
Link To Document :
بازگشت