• DocumentCode
    3171241
  • Title

    SiGe HBT reliability issues associated with operation in extreme environments

  • Author

    Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2006
  • fDate
    18-20 Jan. 2006
  • Abstract
    Electronics operating in harsh surroundings falling outside the domain of conventional circuit specifications are called "extreme environment" electronics. Extreme environments include, for instance, very low (cryogenic) temperatures (e.g., 77K = -196degC), very high temperatures (e.g., 200degC), and radiation (e.g., in space). SiGe HBTs are uniquely suited to such extreme environment applications, and in this paper we discuss the reliability issues that are necessarily encountered when using SiGe technology under these conditions
  • Keywords
    Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; semiconductor device reliability; HBT reliability; SiGe; cryogenic temperatures; extreme environments electronics; heterojunction bipolar transistors; Aerospace electronics; CMOS technology; Circuits; Consumer electronics; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Nuclear electronics; Silicon germanium; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-9472-0
  • Type

    conf

  • DOI
    10.1109/SMIC.2005.1587886
  • Filename
    1587886