DocumentCode
3171241
Title
SiGe HBT reliability issues associated with operation in extreme environments
Author
Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2006
fDate
18-20 Jan. 2006
Abstract
Electronics operating in harsh surroundings falling outside the domain of conventional circuit specifications are called "extreme environment" electronics. Extreme environments include, for instance, very low (cryogenic) temperatures (e.g., 77K = -196degC), very high temperatures (e.g., 200degC), and radiation (e.g., in space). SiGe HBTs are uniquely suited to such extreme environment applications, and in this paper we discuss the reliability issues that are necessarily encountered when using SiGe technology under these conditions
Keywords
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; semiconductor device reliability; HBT reliability; SiGe; cryogenic temperatures; extreme environments electronics; heterojunction bipolar transistors; Aerospace electronics; CMOS technology; Circuits; Consumer electronics; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Nuclear electronics; Silicon germanium; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587886
Filename
1587886
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