1.3 μm polarization insensitive amplifier with integrated mode transformer

Author

Tishinin, Dennis ; Uppal, Kushant ; Kim, In ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

136

Abstract

In summary, we have demonstrated for the first time polarization insensitive mixed strain InGaAsP quantum well laser amplifiers with monolithically integrated mode transformers and show experimentally that an integrated laterally taper section not only provides better coupling of the mode to single mode fiber but maintains the polarization insensitivity of the active region design. In addition, we have achieved the desired mode transformation while maintaining high gain (18 dB) and high saturation power (10 dBm)

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; light polarisation; optical saturation; optical transmitters; quantum well lasers; sensitivity; 1.3 mum; 18 dB; InGaAsP; active region design; high gain; high saturation power; integrated laterally taper section; integrated mode transformer; mode transformation; monolithically integrated mode transformers; polarization insensitive amplifier; polarization insensitive mixed strain InGaAsP quantum well laser amplifiers; polarization insensitivity; single mode fiber coupling; Bandwidth; Circuit faults; Gain; Optical amplifiers; Optical coupling; Optical fiber polarization; Optical waveguides; Semiconductor optical amplifiers; Semiconductor waveguides; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630556

Filename

630556